RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Compare
A-DATA Technology DQVE1908 512MB vs Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Below the latency in the PassMark tests, ns
66
77
Around 14% lower latency
Faster reading speed, GB/s
2
13.1
Average value in the tests
Reasons to consider
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Report a bug
Faster write speed, GB/s
5.5
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
77
Read speed, GB/s
2,775.5
13.1
Write speed, GB/s
1,557.9
5.5
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
382
1440
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB RAM comparisons
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9965525-018.A00LF 4GB
Mushkin 99[2/7/4]192[F/T] 4GB
Kingston 9905403-061.A00LF 2GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Kingston KVR533D2N4 512MB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-3600C18-8GTZN 8GB
Samsung DDR3 8GB 1600MHz 8GB
V-Color Technology Inc. TA48G30S815G 8GB
Samsung M393B5270CH0-CH9 4GB
Corsair CMK32GX4M4B3733C17 8GB
Qimonda 64T128020EDL2.5C2 1GB
Kllisre HMA81GU6AFR8N-VK 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Apacer Technology 78.DAGP2.4030B 16GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT8G4DFD8213.C16FDR2 8GB
Corsair CML8GX3M2A1866C9 4GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
PNY Electronics PNY 2GB
Kingston HP32D4U8S8ME-8XR 8GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology BLS4G4D240FSC.8FBD2 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMD16GX4M4B3200C16-R 4GB
Report a bug
×
Bug description
Source link