RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Compare
Crucial Technology BLS8G3N18AES4.16FE 8GB vs Crucial Technology CT8G4SFRA32A.C8FE 8GB
Overall score
Crucial Technology BLS8G3N18AES4.16FE 8GB
Overall score
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology BLS8G3N18AES4.16FE 8GB
Report a bug
Reasons to consider
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
42
Around -45% lower latency
Faster reading speed, GB/s
16.1
13.2
Average value in the tests
Faster write speed, GB/s
13.1
9.4
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
29
Read speed, GB/s
13.2
16.1
Write speed, GB/s
9.4
13.1
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2326
3072
Crucial Technology BLS8G3N18AES4.16FE 8GB RAM comparisons
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston KY7N41-MIE 8GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
Kingston KVR800D2N6/2G 2GB
Kingston CBD24D4U7S8MA-8 8GB
Kingston 99P5474-014.A00LF 4GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Kingston 9905403-090.A01LF 4GB
Corsair CMV4GX4M1A2400C16 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFD8266.C16FE 16GB
Kingston 9965516-112.A00LF 16GB
Corsair CMK16GX4M2C3000C15 8GB
Samsung M471B5273CH0-CH9 4GB
Kingston KHX2133C13D4/8GX 8GB
Kingston 99U5474-028.A00LF 4GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMD32GX4M4B3000C15 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
SK Hynix DDR2 800 2G 2GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
Report a bug
×
Bug description
Source link