RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Compare
Crucial Technology BLS8G3N18AES4.16FE 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Overall score
Crucial Technology BLS8G3N18AES4.16FE 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology BLS8G3N18AES4.16FE 8GB
Report a bug
Faster write speed, GB/s
9.4
7.4
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
42
Around -68% lower latency
Faster reading speed, GB/s
14.2
13.2
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
25
Read speed, GB/s
13.2
14.2
Write speed, GB/s
9.4
7.4
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2326
2104
Crucial Technology BLS8G3N18AES4.16FE 8GB RAM comparisons
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB RAM comparisons
Samsung M393B1K70QB0-CK0 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5474-010.A00LF 2GB
Kingston 9965600-012.A01G 16GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-2666C19-8GNT 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Kingston 9905458-017.A01LF 4GB
Crucial Technology BL8G32C16U4R.8FE 8GB
Kingston 99U5471-056.A00LF 8GB
Kingston 9965662-016.A00G 16GB
Corsair CMY8GX3M2A2666C10 4GB
Samsung M391A1G43DB0-CPB 8GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CMW64GX4M4Z2933C16 16GB
Kingston 9965662-016.A00G 16GB
SK Hynix HMA851S6CJR6N-VK 4GB
Kingston 9905403-444.A00LF 4GB
Kingston 9965657-011.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Patriot Memory (PDP Systems) PSD432G32002 32GB
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston 9905598-044.A00G 16GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-3000C16-16GTZN 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CMD32GX4M4B3333C16 8GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-2133C15-8GNT 8GB
Report a bug
×
Bug description
Source link