RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BA1339.C16F 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Compare
Crucial Technology CT51264BA1339.C16F 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Overall score
Crucial Technology CT51264BA1339.C16F 4GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BA1339.C16F 4GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Report a bug
Below the latency in the PassMark tests, ns
19
27
Around -42% lower latency
Faster reading speed, GB/s
19.5
13.9
Average value in the tests
Faster write speed, GB/s
15.8
8.4
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BA1339.C16F 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
19
Read speed, GB/s
13.9
19.5
Write speed, GB/s
8.4
15.8
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2251
3435
Crucial Technology CT51264BA1339.C16F 4GB RAM comparisons
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CMY8GX3M2A2666C10 4GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
A-DATA Technology DQKD1A08 1GB
Kingston 9905668-001.A00G 8GB
Kingston 99U5584-010.A00LF 4GB
Kingston 9905678-027.A00G 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Corsair CMU16GX4M2C3000C15 8GB
Samsung M378A1G43DB0-CPB 8GB
Kllisre DDR4-8GB 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Chun Well Technology Holding Limited D4U0832160B 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-4000C18-32GTZN 32GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
Hexon Technology Pte Ltd HEXON 1GB
Transcend Information JM2666HLB-16G 16GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Samsung M393A4K40BB2-CTD 32GB
Samsung M393B1K70CHD-CH9 8GB
AMD R748G2133U2S-UO 8GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-4000C16-16GTRSA 16GB
Report a bug
×
Bug description
Source link