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Crucial Technology CT51264BD160B.C16F 4GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Compare
Crucial Technology CT51264BD160B.C16F 4GB vs Samsung 18ASF1G72PDZ-2G1B1 16GB
Overall score
Crucial Technology CT51264BD160B.C16F 4GB
Overall score
Samsung 18ASF1G72PDZ-2G1B1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BD160B.C16F 4GB
Report a bug
Faster reading speed, GB/s
13.9
9.8
Average value in the tests
Faster write speed, GB/s
9.7
8.6
Average value in the tests
Reasons to consider
Samsung 18ASF1G72PDZ-2G1B1 16GB
Report a bug
Below the latency in the PassMark tests, ns
32
41
Around -28% lower latency
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BD160B.C16F 4GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
41
32
Read speed, GB/s
13.9
9.8
Write speed, GB/s
9.7
8.6
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2366
2271
Crucial Technology CT51264BD160B.C16F 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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