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Crucial Technology CT51264BF160B.M16F 4GB
Shenzhen Technology Co Ltd 8GB
Compare
Crucial Technology CT51264BF160B.M16F 4GB vs Shenzhen Technology Co Ltd 8GB
Overall score
Crucial Technology CT51264BF160B.M16F 4GB
Overall score
Shenzhen Technology Co Ltd 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BF160B.M16F 4GB
Report a bug
Below the latency in the PassMark tests, ns
28
32
Around 13% lower latency
Reasons to consider
Shenzhen Technology Co Ltd 8GB
Report a bug
Faster reading speed, GB/s
15.9
11.8
Average value in the tests
Faster write speed, GB/s
11.9
8.2
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BF160B.M16F 4GB
Shenzhen Technology Co Ltd 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
32
Read speed, GB/s
11.8
15.9
Write speed, GB/s
8.2
11.9
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1854
2831
Crucial Technology CT51264BF160B.M16F 4GB RAM comparisons
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Shenzhen Technology Co Ltd 8GB RAM comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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