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Elpida EBJ10UE8BAFA-AE-E 1GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Compare
Elpida EBJ10UE8BAFA-AE-E 1GB vs Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Overall score
Elpida EBJ10UE8BAFA-AE-E 1GB
Overall score
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Elpida EBJ10UE8BAFA-AE-E 1GB
Report a bug
Reasons to consider
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Report a bug
Below the latency in the PassMark tests, ns
52
65
Around -25% lower latency
Faster reading speed, GB/s
20.5
6.1
Average value in the tests
Faster write speed, GB/s
10.1
4.2
Average value in the tests
Higher memory bandwidth, mbps
17000
8500
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Elpida EBJ10UE8BAFA-AE-E 1GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
65
52
Read speed, GB/s
6.1
20.5
Write speed, GB/s
4.2
10.1
Memory bandwidth, mbps
8500
17000
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
985
2472
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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