RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Elpida EBJ17RG4EFWA-DJ-F 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Compare
Elpida EBJ17RG4EFWA-DJ-F 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Overall score
Elpida EBJ17RG4EFWA-DJ-F 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Elpida EBJ17RG4EFWA-DJ-F 16GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
54
Around -100% lower latency
Faster reading speed, GB/s
15.2
9.4
Average value in the tests
Faster write speed, GB/s
10.2
6.7
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Elpida EBJ17RG4EFWA-DJ-F 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
54
27
Read speed, GB/s
9.4
15.2
Write speed, GB/s
6.7
10.2
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1929
2764
Elpida EBJ17RG4EFWA-DJ-F 16GB RAM comparisons
Elpida EBJ17RG4EAFD-DJ-F 16GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB RAM comparisons
G Skill Intl F3-2133C9-4GAB 4GB
Kingston KF560C40-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Essencore Limited KD4AGU880-32A160T 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3000C16-8GTZR 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-3333C16-8GTZB 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology BL16G32C16S4B.M16FE1 16GB
Avant Technology F6451U64F9333G 4GB
G Skill Intl F4-2666C19-8GIS 8GB
Samsung M393B5270CH0-CH9 4GB
Mushkin MR[ABC]4U320GJJM32G 32GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Samsung M4 70T2864QZ3-CF7 1GB
SK Hynix HMA84GR7AFR4N-VK 32GB
Report a bug
×
Bug description
Source link