RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Elpida EBJ40UG8EFU0-GN-F 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
Elpida EBJ40UG8EFU0-GN-F 4GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Elpida EBJ40UG8EFU0-GN-F 4GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Elpida EBJ40UG8EFU0-GN-F 4GB
Report a bug
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Below the latency in the PassMark tests, ns
37
43
Around -16% lower latency
Faster reading speed, GB/s
16
12.7
Average value in the tests
Faster write speed, GB/s
12.6
8.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Elpida EBJ40UG8EFU0-GN-F 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
37
Read speed, GB/s
12.7
16.0
Write speed, GB/s
8.0
12.6
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2057
2808
Elpida EBJ40UG8EFU0-GN-F 4GB RAM comparisons
Crucial Technology CT51264BF160B.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-4266C19-8GTZR 8GB
SK Hynix HMAA2GS6AJR8N-XN 16GB
Samsung M471A1G44AB0-CWE 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
Samsung M471B5173BH0-CK0 4GB
AMD R534G1601U1S-UO 4GB
Samsung M391A2K43BB1-CPB 16GB
Kingston 9965525-144.A00LF 8GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
Team Group Inc. ZEUS-2133 8GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Apacer Technology D12.2344DT.001 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Corsair CMSX4GX3M1A1600C9 4GB
Apacer Technology D12.2356WS.001 8GB
Kingston 9905471-071.A00LF 8GB
A-DATA Technology AX4S2800316G18-B 16GB
Qimonda 72T128420EFA3SB2 1GB
A-DATA Technology AX4S2800316G18-B 16GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Corsair CMR16GX4M2C3466C16 8GB
Report a bug
×
Bug description
Source link