RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Golden Empire 1GB DDR2 800 CAS=4 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Compare
Golden Empire 1GB DDR2 800 CAS=4 1GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Overall score
Golden Empire 1GB DDR2 800 CAS=4 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Golden Empire 1GB DDR2 800 CAS=4 1GB
Report a bug
Faster reading speed, GB/s
4
15.6
Average value in the tests
Faster write speed, GB/s
2,066.5
12.1
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
49
Around -104% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Golden Empire 1GB DDR2 800 CAS=4 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
49
24
Read speed, GB/s
4,577.1
15.6
Write speed, GB/s
2,066.5
12.1
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
737
2852
Golden Empire 1GB DDR2 800 CAS=4 1GB RAM comparisons
Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Golden Empire 1GB DDR2 800 CAS=4 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Lenovo LMKU8G68AHFHD-32A 8GB
SK Hynix HMA851S6AFR6N-UH 4GB
Kingston 9965525-140.A00LF 8GB
Kingston 9905743-034.A00G 8GB
Samsung M471B1G73QH0-YK0 8GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
PUSKILL DDR3 1600 8G 8GB
Kingston KHX3733C19D4/8GX 8GB
Samsung M471B1G73QH0-YK0 8GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2666C18-4GRS 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Kingston 99U5584-004.A00LF 4GB
Apacer Technology 78.CAGPL.ARC0B 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston KF2933C17S4/16G 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3600C19-8GVSB 8GB
AMD R5316G1609U2K 8GB
AMD R7S48G2400U2S 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston HP24D4R7D4MAM-32 32GB
Report a bug
×
Bug description
Source link