RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-8GTZRX 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3200C16-8GTZRX 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3200C16-8GTZRX 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3200C16-8GTZRX 8GB
Report a bug
Faster reading speed, GB/s
19.2
16
Average value in the tests
Faster write speed, GB/s
15.4
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-8GTZRX 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
19.2
Write speed, GB/s
12.5
15.4
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3609
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3200C16-8GTZRX 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Kingston 9905743-043.A00G 16GB
AMD R538G1601U2S-UO 8GB
Kingston 9905625-075.A00G 16GB
Kingston 9965516-112.A00LF 16GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Samsung M393B5170FH0-CK0 4GB
Kingston HP26D4U9S8ME-8X 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston 9905630-063.A00G 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CM4X16GF3200C22S2 16GB
Kingston KHX1866C10D3/8GX 8GB
G Skill Intl F4-3466C16-8GTZSW 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK64GX4M4B3200C16 16GB
Kingston 99U5429-007.A00LF 2GB
Samsung M393A8K40B21-CTC 64GB
Kingston 99U5471-056.A00LF 8GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Corsair VSA2GSDS667C4 2GB
Kingston MSI24D4S7S8MH-8 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
Kingston 9905403-156.A00LF 2GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
Report a bug
×
Bug description
Source link