RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston ACR512X64D3S13C9G 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Compare
Kingston ACR512X64D3S13C9G 4GB vs Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Overall score
Kingston ACR512X64D3S13C9G 4GB
Overall score
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston ACR512X64D3S13C9G 4GB
Report a bug
Below the latency in the PassMark tests, ns
27
74
Around 64% lower latency
Faster write speed, GB/s
8.5
7.7
Average value in the tests
Reasons to consider
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Report a bug
Faster reading speed, GB/s
13.6
11.5
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Kingston ACR512X64D3S13C9G 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
74
Read speed, GB/s
11.5
13.6
Write speed, GB/s
8.5
7.7
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1756
1616
Kingston ACR512X64D3S13C9G 4GB RAM comparisons
TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DQKD1A08 1GB
Kingston K6VDX7-HYD 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston KF3600C17D4/8GX 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CMK64GX4M8X4133C19 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Corsair CMD128GX4M8B3000C16 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Transcend Information TS2GLH64V1B 16GB
Kingston 9905402-665.A00LF 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
Corsair CMSX4GX3M1A1600C9 4GB
V-GEN D4S4GL32A16TS 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
Kingston 9905471-001.A01LF 2GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Corsair CMWX8GD3200C16W2E 8GB
Kingston 99U5584-001.A00LF 4GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Samsung M3 78T5663RZ3-CF7 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Report a bug
×
Bug description
Source link