RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M471A1K43EB1-CWE 8GB
Compare
Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung M471A1K43EB1-CWE 8GB
Overall score
Micron Technology 16JTF51264HZ-1G6M1 4GB
Overall score
Samsung M471A1K43EB1-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB
Report a bug
Below the latency in the PassMark tests, ns
28
46
Around 39% lower latency
Reasons to consider
Samsung M471A1K43EB1-CWE 8GB
Report a bug
Faster reading speed, GB/s
16
12.9
Average value in the tests
Faster write speed, GB/s
12.4
9.0
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M471A1K43EB1-CWE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
46
Read speed, GB/s
12.9
16.0
Write speed, GB/s
9.0
12.4
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2112
2660
Micron Technology 16JTF51264HZ-1G6M1 4GB RAM comparisons
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB
Samsung M471A1K43EB1-CWE 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Apacer Technology 78.C1GET.9K10C 8GB
Avant Technology J644GU44J2320NQ 32GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
Kingston 99U5474-037.A00LF 4GB
G Skill Intl F4-2400C17-4GVR 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9905744-005.A00G 16GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston 6400DT Series 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
Samsung M378A1K43EB2-CWE 8GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston HP32D4U8D8HC-16X 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
Report a bug
×
Bug description
Source link