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Micron Technology 16KTF1G64HZ-1G9E2 8GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Compare
Micron Technology 16KTF1G64HZ-1G9E2 8GB vs Samsung 18ASF1G72PDZ-2G1B1 16GB
Overall score
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Overall score
Samsung 18ASF1G72PDZ-2G1B1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16KTF1G64HZ-1G9E2 8GB
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Below the latency in the PassMark tests, ns
25
32
Around 22% lower latency
Faster reading speed, GB/s
15.4
9.8
Average value in the tests
Faster write speed, GB/s
11.3
8.6
Average value in the tests
Reasons to consider
Samsung 18ASF1G72PDZ-2G1B1 16GB
Report a bug
Higher memory bandwidth, mbps
17000
14900
Around 1.14 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
32
Read speed, GB/s
15.4
9.8
Write speed, GB/s
11.3
8.6
Memory bandwidth, mbps
14900
17000
Other
Description
PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-10-9-28 / 1866 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2696
2271
Micron Technology 16KTF1G64HZ-1G9E2 8GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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