RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT2GT64U8HD0BY-AD 2GB
SK Hynix HMA82GS6DJR8N-WM 16GB
Compare
Nanya Technology NT2GT64U8HD0BY-AD 2GB vs SK Hynix HMA82GS6DJR8N-WM 16GB
Overall score
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Overall score
SK Hynix HMA82GS6DJR8N-WM 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Report a bug
Faster reading speed, GB/s
4
15
Average value in the tests
Faster write speed, GB/s
2,256.8
13.0
Average value in the tests
Reasons to consider
SK Hynix HMA82GS6DJR8N-WM 16GB
Report a bug
Below the latency in the PassMark tests, ns
43
64
Around -49% lower latency
Higher memory bandwidth, mbps
23400
6400
Around 3.66 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT2GT64U8HD0BY-AD 2GB
SK Hynix HMA82GS6DJR8N-WM 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
64
43
Read speed, GB/s
4,651.3
15.0
Write speed, GB/s
2,256.8
13.0
Memory bandwidth, mbps
6400
23400
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
5-5-5-15 / 800 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)
837
2794
Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM comparisons
G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB
SK Hynix HMA82GS6DJR8N-WM 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863QZS-CF7 1GB
Kingston 9905702-010.A00G 8GB
Mushkin 991586 2GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
A-DATA Technology DOVF1B163G2G 2GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
SK Hynix HYMP125S64CP8-S6 2GB
Corsair CMK128GX4M4A2666C16 32GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-3200C15-8GTZSW 8GB
Kingston 9965525-018.A00LF 4GB
Patriot Memory (PDP Systems) PSD48G240081 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
InnoDisk Corporation M4C0-AGS1TCIK 16GB
Kingston 99U5471-020.A00LF 4GB
Samsung M474A1G43DB0-CPB 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Kingston 9905702-010.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
Samsung M378A2K43EB1-CWE 16GB
A-DATA Technology AD5U480016G-B 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT8G4DFS8213.M8FH 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Shenzhen Technology Co Ltd 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-4400C17-16GTZR 16GB
Report a bug
×
Bug description
Source link