RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Faster reading speed, GB/s
2
19.4
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Report a bug
Below the latency in the PassMark tests, ns
32
71
Around -122% lower latency
Faster write speed, GB/s
16.3
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
32
Read speed, GB/s
2,831.6
19.4
Write speed, GB/s
1,322.6
16.3
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
399
3726
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5469-045.A00LF 4GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3600C18-16GTRS 16GB
Kingston KVR16N11/8-SP 8GB
Kingston 9905625-030.A00G 8GB
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2666 2OZ 4GB
Kingston KHX1600C9S3L/4G 4GB
Kingston 9905701-010.A00G 16GB
Kingston 9905403-515.A00LF 8GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
Kingston KHX1866C10D3/8GX 8GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
Kingston HP24D4U7S1MBP-4 4GB
Samsung M378A5244CB0-CRC 4GB
Kingston KHX2800C14D4/8GX 8GB
G Skill Intl F4-3300C16-4GRKD 4GB
Kingston 9965525-155.A00LF 8GB
Kingston 9965604-033.D00G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Transcend Information AQD-SD4U16GN21-SE 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston KP6FH5-MIE 32GB
Kingston 99U5429-007.A00LF 2GB
Essencore Limited IM4AGU88N26-GIIHMB 16GB
Report a bug
×
Bug description
Source link