PNY Electronics PNY 2GB
Corsair CMSX16GX4M2A2666C18 8GB

PNY Electronics PNY 2GB vs Corsair CMSX16GX4M2A2666C18 8GB

Overall score
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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
star star star star star
Corsair CMSX16GX4M2A2666C18 8GB

Corsair CMSX16GX4M2A2666C18 8GB

Differences

  • Below the latency in the PassMark tests, ns
    27 left arrow 36
    Around 25% lower latency
  • Faster reading speed, GB/s
    15 left arrow 13.8
    Average value in the tests
  • Faster write speed, GB/s
    11.3 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 10600
    Around 2.01 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
Corsair CMSX16GX4M2A2666C18 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 36
  • Read speed, GB/s
    13.8 left arrow 15.0
  • Write speed, GB/s
    8.4 left arrow 11.3
  • Memory bandwidth, mbps
    10600 left arrow 21300
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 2653
RAM Latency Calculator
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