RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Compare
PNY Electronics PNY 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Overall score
PNY Electronics PNY 2GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
31
Around 13% lower latency
Faster reading speed, GB/s
13.8
12.5
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Report a bug
Faster write speed, GB/s
9.4
8.4
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
31
Read speed, GB/s
13.8
12.5
Write speed, GB/s
8.4
9.4
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2274
2361
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
Corsair CMH16GX4M2Z3600C18 8GB
A-DATA Technology AD73I1B1672EG 2GB
Samsung M471B5673EH1-CF8 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2400C16-8GRS 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F4-3600C19-8GSXF 8GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M471A1A43DB0-CPB 8GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Crucial Technology 8G4US2400.M8B1 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMT32GX4M4K4000C19 8GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMT64GX4M8Z3600C16 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Gloway International (HK) STKD4GAM2400-F 8GB
Report a bug
×
Bug description
Source link