Qimonda 72T128420EFA3SB2 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Qimonda 72T128420EFA3SB2 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Overall score
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Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Differences

  • Faster reading speed, GB/s
    3 left arrow 14.6
    Average value in the tests
  • Faster write speed, GB/s
    2,069.2 left arrow 10.5
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    27 left arrow 106
    Around -293% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
Qimonda 72T128420EFA3SB2 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    106 left arrow 27
  • Read speed, GB/s
    3,273.7 left arrow 14.6
  • Write speed, GB/s
    2,069.2 left arrow 10.5
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    734 left arrow 2409
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

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