Samsung 1600 CL10 Series 8GB
Corsair CMU16GX4M2C3200C16 8GB

Samsung 1600 CL10 Series 8GB vs Corsair CMU16GX4M2C3200C16 8GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Corsair CMU16GX4M2C3200C16 8GB

Corsair CMU16GX4M2C3200C16 8GB

Differences

  • Below the latency in the PassMark tests, ns
    25 left arrow 27
    Around 7% lower latency
  • Faster reading speed, GB/s
    19.2 left arrow 16.1
    Average value in the tests
  • Faster write speed, GB/s
    15.3 left arrow 10.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Corsair CMU16GX4M2C3200C16 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 27
  • Read speed, GB/s
    16.1 left arrow 19.2
  • Write speed, GB/s
    10.1 left arrow 15.3
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 3584
RAM Latency Calculator
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