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Samsung 1600 CL10 Series 8GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Samsung 1600 CL10 Series 8GB vs Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 52
    Around 52% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 10
    Average value in the tests
  • Faster write speed, GB/s
    10.1 left arrow 7.6
    Average value in the tests
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB Reasons to consider
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 52
  • Read speed, GB/s
    16.1 left arrow 10.0
  • Write speed, GB/s
    10.1 left arrow 7.6
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 2169

Samsung 1600 CL10 Series 8GB RAM comparisons

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Samsung 1600 CL10 Series 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB RAM comparisons

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