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Samsung 1600 CL10 Series 8GB
InnoDisk Corporation 16GB
Compare
Samsung 1600 CL10 Series 8GB vs InnoDisk Corporation 16GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
InnoDisk Corporation 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
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Below the latency in the PassMark tests, ns
25
38
Around 34% lower latency
Faster reading speed, GB/s
16.1
7.7
Average value in the tests
Faster write speed, GB/s
10.1
8.2
Average value in the tests
Reasons to consider
InnoDisk Corporation 16GB
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Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
InnoDisk Corporation 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
38
Read speed, GB/s
16.1
7.7
Write speed, GB/s
10.1
8.2
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
2163
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
InnoDisk Corporation 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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