RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Report a bug
Below the latency in the PassMark tests, ns
19
25
Around -32% lower latency
Faster reading speed, GB/s
18.7
16.1
Average value in the tests
Faster write speed, GB/s
14.2
10.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
19
Read speed, GB/s
16.1
18.7
Write speed, GB/s
10.1
14.2
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2764
3220
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB RAM comparisons
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS8G4D30AESEK.M8FE1 8GB
Samsung 1600 CL10 Series 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3600C14-16GVK 16GB
Samsung M378B5673FH0-CH9 2GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD32GX4M4A2400C14 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Samsung M378A1K43CB2-CRC 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-2133C15-8GVK 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston MSI26D4S9S8ME-8 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston K6VDX7-MIE 8GB
Corsair CML16GX3M2A1600C10 8GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Kingston 99U5584-007.A00LF 4GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Kingston 9905403-003.B00LF 4GB
G Skill Intl F4-3200C16-8GVK 8GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-2133C15-8GNT 8GB
Report a bug
×
Bug description
Source link