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Samsung M3 78T2863EHS-CF7 1GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Below the latency in the PassMark tests, ns
59
63
Around 6% lower latency
Faster reading speed, GB/s
4
16.6
Average value in the tests
Reasons to consider
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Report a bug
Faster write speed, GB/s
8.2
2,123.3
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
63
Read speed, GB/s
4,833.8
16.6
Write speed, GB/s
2,123.3
8.2
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
731
1863
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
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Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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