RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-3333C16-16GTZB 16GB
Compare
Samsung M3 78T2953EZ3-CF7 1GB vs G Skill Intl F4-3333C16-16GTZB 16GB
Overall score
Samsung M3 78T2953EZ3-CF7 1GB
Overall score
G Skill Intl F4-3333C16-16GTZB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2953EZ3-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
20.8
Average value in the tests
Reasons to consider
G Skill Intl F4-3333C16-16GTZB 16GB
Report a bug
Below the latency in the PassMark tests, ns
19
58
Around -205% lower latency
Faster write speed, GB/s
17.1
1,950.7
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-3333C16-16GTZB 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
58
19
Read speed, GB/s
4,241.0
20.8
Write speed, GB/s
1,950.7
17.1
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
651
3821
Samsung M3 78T2953EZ3-CF7 1GB RAM comparisons
Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3333C16-16GTZB 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-4400C17-16GTZR 16GB
Swissbit MEU25664D6BC2EP-30 2GB
JUHOR JHD2666U1916JG 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
Kingston 9965516-430.A00G 16GB
EVGA 8GX-D4-3000-MR 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMV16GX4M1A2400C16 16GB
Corsair CMZ16GX3M2A1866C9 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-3600C16-32GTZN 32GB
Kingston 99U5584-001.A00LF 4GB
Corsair CM4X8GF3000C15K4 8GB
Samsung M4 70T5663QZ3-CF7 2GB
Apacer Technology 78.C1GMW.AUC0B 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Mushkin MR[A/B]4U320GJJM8G 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston X5H5PW-MIE 8GB
Report a bug
×
Bug description
Source link