RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology BLS16G4D30AESC.M16FE 16GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
17.4
Average value in the tests
Reasons to consider
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
46
Around -64% lower latency
Faster write speed, GB/s
13.1
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
19200
3200
Around 6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
28
Read speed, GB/s
2,909.8
17.4
Write speed, GB/s
1,519.2
13.1
Memory bandwidth, mbps
3200
19200
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
3-3-3-12 / 400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
241
3437
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-YK0 16GB
G Skill Intl F4-4400C18-8GTZR 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
Samsung M393B2G70BH0-CK0 16GB
Mushkin 99[2/7/4]197F 8GB
Samsung M471B5273CH0-CH9 4GB
Corsair CM4B4G1J2400A14K 4GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9905663-006.A00G 16GB
PUSKILL DDR3 1600 8G 8GB
Samsung M393A1G40DB0-CPB 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
Samsung M471B5273DH0-CH9 4GB
Mushkin MR[A/B]4U300JJJM16G 16GB
Samsung M471A1K43EB1-CWE 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
Kingston KHX3200C16D4/8GX 8GB
Kingston XW21KG-MIE2 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3600C14-16GTZR 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
Report a bug
×
Bug description
Source link