RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Below the latency in the PassMark tests, ns
46
122
Around 62% lower latency
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Report a bug
Faster reading speed, GB/s
9.4
2
Average value in the tests
Faster write speed, GB/s
5.8
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
19200
3200
Around 6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
122
Read speed, GB/s
2,909.8
9.4
Write speed, GB/s
1,519.2
5.8
Memory bandwidth, mbps
3200
19200
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
3-3-3-12 / 400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
241
1411
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB RAM comparisons
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DQVE1908 512MB
Kingston 8ATF1G64AZ-2G1B1 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
Samsung M393B1K70CH0-YH9 8GB
SK Hynix GKE800SO51208-2133AH 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
Crucial Technology CT25664BA1339.M8FR 2GB
AMD R334G1339U2S 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3200C14-32GVK 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Golden Empire CL15-15-15 D4-2133 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CM4X8GF2666C16K8 8GB
Kingston 99U5584-005.A00LF 4GB
Kingston KHX2666C13D4/8GX 8GB
AMD R5316G1609U2K 8GB
SK Hynix HMA84GR7JJR4N-VK 32GB
Corsair CM2X1024-6400C4 1GB
Corsair CMD16GX4M4B2400C10 4GB
Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
A-DATA Technology DQVE1908 512MB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Report a bug
×
Bug description
Source link