Samsung M3 93T5750CZA-CE6 2GB vs Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Overall score

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB

Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB

Faster reading speed, GB/s

3 16.5

Average value in the tests

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Reasons to consider
Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Below the latency in the PassMark tests, ns

53 77

Around -45% lower latency
Faster write speed, GB/s

9.6 2,622.0

Average value in the tests
Higher memory bandwidth, mbps

19200 5300

Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M3 93T5750CZA-CE6 2GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

77 53
Read speed, GB/s

3,405.2 16.5
Write speed, GB/s

2,622.0 9.6
Memory bandwidth, mbps

5300 19200

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

763 2301

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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