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Samsung M378B5273CH0-CH9 4GB
AMD R534G1601U1S 4GB
Compare
Samsung M378B5273CH0-CH9 4GB vs AMD R534G1601U1S 4GB
Overall score
Samsung M378B5273CH0-CH9 4GB
Overall score
AMD R534G1601U1S 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5273CH0-CH9 4GB
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Below the latency in the PassMark tests, ns
37
68
Around 46% lower latency
Faster reading speed, GB/s
13.2
6.5
Average value in the tests
Faster write speed, GB/s
8.4
4.7
Average value in the tests
Reasons to consider
AMD R534G1601U1S 4GB
Report a bug
Higher memory bandwidth, mbps
12800
10600
Around 1.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
AMD R534G1601U1S 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
37
68
Read speed, GB/s
13.2
6.5
Write speed, GB/s
8.4
4.7
Memory bandwidth, mbps
10600
12800
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
Timings / Clock speed
7-7-7-20 / 1333 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
2143
1209
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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