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Samsung M378B5273CH0-CH9 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Compare
Samsung M378B5273CH0-CH9 4GB vs Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Overall score
Samsung M378B5273CH0-CH9 4GB
Overall score
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5273CH0-CH9 4GB
Report a bug
Below the latency in the PassMark tests, ns
37
52
Around 29% lower latency
Reasons to consider
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Report a bug
Faster reading speed, GB/s
20.5
13.2
Average value in the tests
Faster write speed, GB/s
10.1
8.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
52
Read speed, GB/s
13.2
20.5
Write speed, GB/s
8.4
10.1
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2143
2472
Samsung M378B5273CH0-CH9 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
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Absolute Latency
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