Samsung M378B5273CH0-CH9 4GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Samsung M378B5273CH0-CH9 4GB vs OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Overall score
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Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Overall score
star star star star star
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Differences

  • Below the latency in the PassMark tests, ns
    27 left arrow 37
    Around -37% lower latency
  • Faster reading speed, GB/s
    17.4 left arrow 13.2
    Average value in the tests
  • Faster write speed, GB/s
    14.5 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 10600
    Around 2.42 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    37 left arrow 27
  • Read speed, GB/s
    13.2 left arrow 17.4
  • Write speed, GB/s
    8.4 left arrow 14.5
  • Memory bandwidth, mbps
    10600 left arrow 25600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2143 left arrow 3692
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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