RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673EH1-CF8 2GB
Micron Technology 16G3200CL22 16GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Micron Technology 16G3200CL22 16GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Micron Technology 16G3200CL22 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Faster write speed, GB/s
7.5
7.3
Average value in the tests
Reasons to consider
Micron Technology 16G3200CL22 16GB
Report a bug
Faster reading speed, GB/s
14
12.7
Average value in the tests
Higher memory bandwidth, mbps
25600
8500
Around 3.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Micron Technology 16G3200CL22 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
28
Read speed, GB/s
12.7
14.0
Write speed, GB/s
7.5
7.3
Memory bandwidth, mbps
8500
25600
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
7-7-7-20 / 1066 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1988
2663
Samsung M378B5673EH1-CF8 2GB RAM comparisons
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB
Micron Technology 16G3200CL22 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP512S64CP8-Y5 1GB
Kingston 9905701-141.A00G 16GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
Crucial Technology CT102464BF160B.C16 8GB
Micron Technology AFLD48EH1P 8GB
Avant Technology F6451U64F9333G 4GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
SK Hynix HYMP151F72CPD43-S6 4GB
Kingston KVR800D2N6/2G 2GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3000C15-8GVS 8GB
Kingston 99U5403-036.A00G 4GB
Kingston 9905678-065.A00G 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Corsair CMD16GX4M2B3000C15 8GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3300C16-16GTZKW 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Kingston 2GB-DDR2 800Mhz 2GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
Kingston 9905403-038.A00LF 4GB
G Skill Intl F4-3000C15-8GRKB 8GB
Crucial Technology CT102464BA160B.M16 8GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
Report a bug
×
Bug description
Source link