RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5270CH0-CH9 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Compare
Samsung M393B5270CH0-CH9 4GB vs OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Overall score
Samsung M393B5270CH0-CH9 4GB
Overall score
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5270CH0-CH9 4GB
Report a bug
Reasons to consider
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
42
Around -40% lower latency
Faster reading speed, GB/s
16
10.6
Average value in the tests
Faster write speed, GB/s
10.6
9.0
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5270CH0-CH9 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
30
Read speed, GB/s
10.6
16.0
Write speed, GB/s
9.0
10.6
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2423
3026
Samsung M393B5270CH0-CH9 4GB RAM comparisons
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP512S64CP8-Y5 1GB
Kingston 99U5624-001.A00G 8GB
Kingston KHX2800C14D4/8GX 8GB
Transcend Information TS512MSH64V1H 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
G Skill Intl F3-2400C11-8GSR 8GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Samsung M378B5173EB0-CK0 4GB
Team Group Inc. TEAMGROUP-UD4-2666 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston KHX3733C19D4/8GX 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905702-010.A00G 8GB
Kingston 99U5474-038.A00LF 4GB
Transcend Information TS2GSH64V6B 16GB
Kingston 99U5474-028.A00LF 4GB
SK Hynix HMA82GS6DJR8N-VK 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
Kingston 9905316-106.A02LF 1GB
Samsung M393A5143DB0-CRC 4GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Corsair CMU32GX4M4C3200C16 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
Report a bug
×
Bug description
Source link