RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
16.1
Average value in the tests
Reasons to consider
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Report a bug
Below the latency in the PassMark tests, ns
70
104
Around -49% lower latency
Faster write speed, GB/s
8.4
2,404.5
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
70
Read speed, GB/s
3,192.0
16.1
Write speed, GB/s
2,404.5
8.4
Memory bandwidth, mbps
6400
21300
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
786
1838
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905471-002.A00LF 2GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
Team Group Inc. Team-Elite-1333 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
Mushkin 991586 2GB
G Skill Intl F4-3200C15-16GTZKY 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMD32GX4M4A2800C16 8GB
Kingston 99U5474-010.A00LF 2GB
Kllisre M378A5143EB2-CRC 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston KHYXPX-MID 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMW16GX4M2Z3600C18 8GB
Mushkin 991586 2GB
Kingston XW21KG-HYD-NX 8GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9965596-002.B00G 4GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology BL32G32C16U4BL.M16FB 32GB
AMD R538G1601U2S 8GB
Samsung M393A1G40DB1-CRC 8GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3333C16-16GTZSW 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
Report a bug
×
Bug description
Source link