RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Panram International Corporation W4U2666P-8G 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Panram International Corporation W4U2666P-8G 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Panram International Corporation W4U2666P-8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
17.3
Average value in the tests
Faster write speed, GB/s
2,404.5
14.2
Average value in the tests
Reasons to consider
Panram International Corporation W4U2666P-8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
104
Around -271% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Panram International Corporation W4U2666P-8G 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
28
Read speed, GB/s
3,192.0
17.3
Write speed, GB/s
2,404.5
14.2
Memory bandwidth, mbps
6400
21300
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
Timings / Clock speed
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
786
3366
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Panram International Corporation W4U2666P-8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C14-8GTZRA 8GB
Kingston ACR512X64D3S13C9G 4GB
Ramaxel Technology RMUA5200ME78HAF-3200 8GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3866C18-8GTZR 8GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9905703-009.A00G 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMK32GX4M2B3200C16 16GB
Kingston 9965525-140.A00LF 8GB
Corsair CMD16GX4M4B3400C16 4GB
Kingston KVR533D2N4 512MB
Corsair CMD32GX4M4B3000C15 8GB
Kingston K1N7HK-ELC 2GB
AMD R7416G2133U2S 16GB
Kingston 9965525-140.A00LF 8GB
Samsung M471A1K43CB1-CRCR 8GB
Qimonda 72T128420EFA3SB2 1GB
G Skill Intl F4-3200C22-8GRS 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-3200C16-8GTZSW 8GB
SK Hynix HMT451U6BFR8A-PB 4GB
Corsair CMT32GX4M2E3200C16 16GB
Report a bug
×
Bug description
Source link