RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Compare
Samsung M4 70T5663CZ3-CE6 2GB vs Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Overall score
Samsung M4 70T5663CZ3-CE6 2GB
Overall score
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
20
Average value in the tests
Reasons to consider
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
69
Around -146% lower latency
Faster write speed, GB/s
16.4
1,441.2
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
69
28
Read speed, GB/s
3,325.1
20.0
Write speed, GB/s
1,441.2
16.4
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
525
3925
Samsung M4 70T5663CZ3-CE6 2GB RAM comparisons
Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
V-Color Technology Inc. TN416G26D819-SB 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
Kingston K531R8-ETB 4GB
SK Hynix HMA41GU6MFR8N-TF 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
SpecTek Incorporated ?????????????????? 2GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Samsung M471B5273CH0-CH9 4GB
Avant Technology J642GU42J9266N4 16GB
Kingston 99U5471-056.A00LF 8GB
Avant Technology W641GU42J5213NC 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3600C17-4GTZ 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3200C15-8GVK 8GB
SK Hynix HMT451U6BFR8A-PB 4GB
Kingston HP32D4S2S8ME-16 16GB
Samsung M471A2K43EB1-CWE 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Kingston KHX8500D2K2/2GN 1GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Kingston 99U5474-010.A00LF 2GB
Kingston KHX3000C16D4/16GX 16GB
Report a bug
×
Bug description
Source link