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Samsung M471B5273CH0-CH9 4GB
SK Hynix HMT425S6AFR6A-PB 2GB
Compare
Samsung M471B5273CH0-CH9 4GB vs SK Hynix HMT425S6AFR6A-PB 2GB
Overall score
Samsung M471B5273CH0-CH9 4GB
Overall score
SK Hynix HMT425S6AFR6A-PB 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
Reasons to consider
SK Hynix HMT425S6AFR6A-PB 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
48
Around -71% lower latency
Faster reading speed, GB/s
12.6
8.9
Average value in the tests
Faster write speed, GB/s
8.2
5.9
Average value in the tests
Higher memory bandwidth, mbps
12800
10600
Around 1.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273CH0-CH9 4GB
SK Hynix HMT425S6AFR6A-PB 2GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
48
28
Read speed, GB/s
8.9
12.6
Write speed, GB/s
5.9
8.2
Memory bandwidth, mbps
10600
12800
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
7-7-7-20 / 1333 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
1420
1822
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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