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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Compare
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Samsung V-GeN D4S4GL30A16TS5 4GB
Overall score
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Overall score
Samsung V-GeN D4S4GL30A16TS5 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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Below the latency in the PassMark tests, ns
46
62
Around 26% lower latency
Faster write speed, GB/s
13.6
7.0
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Samsung V-GeN D4S4GL30A16TS5 4GB
Report a bug
Faster reading speed, GB/s
16.7
14.2
Average value in the tests
Specifications
Complete list of technical specifications
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
46
62
Read speed, GB/s
14.2
16.7
Write speed, GB/s
13.6
7.0
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2717
1808
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Samsung V-GeN D4S4GL30A16TS5 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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