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SK Hynix HMA451U6AFR8N-TF 4GB
Samsung SF4641G8CKHI6DFSDS 8GB

SK Hynix HMA451U6AFR8N-TF 4GB vs Samsung SF4641G8CKHI6DFSDS 8GB

Overall score
star star star star star
SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Overall score
star star star star star
Samsung SF4641G8CKHI6DFSDS 8GB

Samsung SF4641G8CKHI6DFSDS 8GB

Differences Specifications Comments

Differences

SK Hynix HMA451U6AFR8N-TF 4GB Reasons to consider
SK Hynix HMA451U6AFR8N-TF 4GB
Report a bug
Samsung SF4641G8CKHI6DFSDS 8GB Reasons to consider
Samsung SF4641G8CKHI6DFSDS 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 37
    Around -32% lower latency
  • Faster reading speed, GB/s
    15.3 left arrow 14.7
    Average value in the tests
  • Faster write speed, GB/s
    11.6 left arrow 10.6
    Average value in the tests

Specifications

Complete list of technical specifications
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung SF4641G8CKHI6DFSDS 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    37 left arrow 28
  • Read speed, GB/s
    14.7 left arrow 15.3
  • Write speed, GB/s
    10.6 left arrow 11.6
  • Memory bandwidth, mbps
    17000 left arrow 17000
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2438 left arrow 2648

SK Hynix HMA451U6AFR8N-TF 4GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung SF4641G8CKHI6DFSDS 8GB RAM comparisons

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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