Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Smart Modular SMS4TDC3C0K0446SCG 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Smart Modular SMS4TDC3C0K0446SCG 4GB

Overall score
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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Overall score
star star star star star
Smart Modular SMS4TDC3C0K0446SCG 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

Differences

  • Below the latency in the PassMark tests, ns
    28 left arrow 39
    Around 28% lower latency
  • Faster reading speed, GB/s
    14.3 left arrow 12.4
    Average value in the tests
  • Faster write speed, GB/s
    10.8 left arrow 9.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 39
  • Read speed, GB/s
    12.4 left arrow 14.3
  • Write speed, GB/s
    9.6 left arrow 10.8
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2329 left arrow 2159
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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