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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Compare
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Overall score
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Overall score
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Faster reading speed, GB/s
13.7
11.1
Average value in the tests
Faster write speed, GB/s
9.6
6.1
Average value in the tests
Reasons to consider
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
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Below the latency in the PassMark tests, ns
30
35
Around -17% lower latency
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
35
30
Read speed, GB/s
13.7
11.1
Write speed, GB/s
9.6
6.1
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2312
1254
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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