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Samsung M378B5273CH0-CH9 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
Samsung M378B5273CH0-CH9 4GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Samsung M378B5273CH0-CH9 4GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5273CH0-CH9 4GB
Report a bug
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Faster reading speed, GB/s
16
13.2
Average value in the tests
Faster write speed, GB/s
12.6
8.4
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
37
Read speed, GB/s
13.2
16.0
Write speed, GB/s
8.4
12.6
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2143
2808
Samsung M378B5273CH0-CH9 4GB RAM comparisons
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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
0 ns
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