RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2400C15-8GRB 8GB
Compare
Samsung M471A5244CB0-CWE 4GB vs G Skill Intl F4-2400C15-8GRB 8GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
G Skill Intl F4-2400C15-8GRB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
Faster reading speed, GB/s
15.5
14.5
Average value in the tests
Faster write speed, GB/s
12.0
11.6
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-2400C15-8GRB 8GB
Report a bug
Below the latency in the PassMark tests, ns
36
38
Around -6% lower latency
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2400C15-8GRB 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
36
Read speed, GB/s
15.5
14.5
Write speed, GB/s
12.0
11.6
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2283
3001
Samsung M471A5244CB0-CWE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C15-8GRB 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Swissbit MEU25664D6BC2EP-30 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2400C15-8GRB 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Samsung M471A1K43EB1-CWE 8GB
A-DATA Technology DOVF1B163G2G 2GB
SK Hynix HMA81GR7MFR8N-UH 8GB
Kingston 9905702-010.A00G 8GB
Kingston 9905622-057.A00G 4GB
Kingston 99U5584-007.A00LF 4GB
G Skill Intl F4-4133C19-8GTZKKF 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3200C16-16GTZKY 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9965657-011.A00G 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK32GX4M4A2800C16 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
Kingston LV36D4U1S8HD-8XR 8GB
Kingston 9905471-002.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-4266C17-8GTZRB 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Mushkin MR[A/B]4U280HHHH8G 8GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
Report a bug
×
Bug description
Source link