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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Compare
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Overall score
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Report a bug
Below the latency in the PassMark tests, ns
96
122
Around 21% lower latency
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Report a bug
Faster reading speed, GB/s
9.4
2
Average value in the tests
Faster write speed, GB/s
5.8
1,336.0
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
96
122
Read speed, GB/s
2,725.2
9.4
Write speed, GB/s
1,336.0
5.8
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
438
1411
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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RAM 2
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