Hynix Semiconductor (Hyundai Electronics) HYMP564U648-C4 512MB
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Hynix Semiconductor (Hyundai Electronics) HYMP564U648-C4 512MB

Review RAM Hynix Semiconductor (Hyundai Electronics) HYMP564U648-C4 512MB, specifications, benchmarks

Hynix Semiconductor (Hyundai Electronics) HYMP564U648-C4 512MB memory module review. Main technical characteristics and benchmark performance evaluation from PassMark. We suggest studying all the data and comparing it with the competitive model.

Specifications

Complete list of technical specifications
Features
  • Type
    DDR2
  • Name
    Hynix Semiconductor (Hyundai Electronics) HYMP564U648-C4
  • Characteristics
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
  • Memory bandwidth
    4200 mbps
  • Timings / Clock speed

    * check the manufacturer's website

    4-4-4-12 / 533 MHz
Performance by PassMark
  • Latency
    47 ns
  • Read speed
    3,570.2 GB/s
  • Write speed
    1,790.2 GB/s
# 333 400 533 667 800 933 1067 MT/s
4 12.00 10.00 7.50 6.00 5.00 4.29 3.75
5 15.00 12.50 9.38 7.50 6.25 5.36 4.69
6 18.00 15.00 11.25 9.00 7.50 6.43 5.62
7 21.00 17.50 13.13 10.50 8.75 7.50 6.56
8 24.00 20.00 15.00 12.00 10.00 8.57 7.50
9 27.00 22.50 16.88 13.50 11.25 9.64 8.44
10 30.00 25.00 18.75 15.00 12.50 10.71 9.37
11 33.00 27.50 20.63 16.50 13.75 11.79 10.31
12 36.00 30.00 22.50 18.00 15.00 12.86 11.25
CL

CAS latency measures the number of clock cycles that pass from when a request to read data is made to when such information is available

Performance tests

Real tests Hynix Semiconductor (Hyundai Electronics) HYMP564U648-C4 512MB
Read Uncached Transfer Speed
Average memory read time without caching
Write Transfer Speed
Average write speed
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Hynix Semiconductor (Hyundai Electronics) HYMP564U648-C4 512MB