RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Sélectionner RAM 1
Sélectionner RAM 2
Comparez
DDR2 Liste de RAM
Tous les modules de mémoire, triés par latence croissante.
№
Bande passante
Latency, ns
Vitesse de lecture, GB/s
Vitesse d'écriture, GB/s
№
301
RAM
Samsung M395T5160QZ4-CE76 4GB
Latency
48
Read speed
3,418.2
Write speed
2,581.1
№
302
RAM
Apacer Technology 78.01G92. 1GB
Latency
48
Read speed
3,118.2
Write speed
1,449.2
№
303
RAM
Kingston 16HTF51264HZ-800C1 4GB
Latency
48
Read speed
5,422.0
Write speed
2,134.5
№
304
RAM
Apacer Technology 78.A1GA0.9LM 2GB
Latency
48
Read speed
5,242.2
Write speed
2,546.3
№
305
RAM
Kingston TCM633-QAC 1GB
Latency
48
Read speed
5,249.2
Write speed
2,284.5
№
306
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-S6 2GB
Latency
48
Read speed
5,347.9
Write speed
2,374.7
№
307
RAM
Kingston 99U5315-020.A00LF 512MB
Latency
48
Read speed
4,187.1
Write speed
2,013.2
№
308
RAM
Transcend Information TS256MLQ64V5U 2GB
Latency
48
Read speed
3,315.5
Write speed
1,445.9
№
309
RAM
Transcend Information TS256MLQ64V8P 2GB
Latency
48
Read speed
5,509.9
Write speed
2,201.8
№
310
RAM
Apacer Technology 78.AAGA0.9L4 2GB
Latency
48
Read speed
5,124.4
Write speed
2,426.6
№
311
RAM
OCZ OCZ2RPR10661G 1GB
Latency
48
Read speed
5,545.5
Write speed
2,536.1
№
312
RAM
Kingston 99U5315-045.A00LF 1GB
Latency
48
Read speed
5,037.3
Write speed
2,241.1
№
313
RAM
Mushkin 991558+(996558+) 2GB
Latency
48
Read speed
5,408.8
Write speed
2,202.6
№
314
RAM
Transcend Information TX1066QLU-2GK 1GB
Latency
48
Read speed
5,599.5
Write speed
2,493.4
№
315
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U64BP8-S5 1GB
Latency
48
Read speed
4,756.8
Write speed
2,183.9
№
316
RAM
Kreton Corporation 515236225641452900 1GB
Latency
48
Read speed
4,345.7
Write speed
2,096.3
№
317
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U72BP8-Y5 1GB
Latency
48
Read speed
4,647.6
Write speed
1,763.7
№
318
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U72CP8-S6 1GB
Latency
48
Read speed
4,965.9
Write speed
2,099.1
№
319
RAM
TwinMOS 8DRP5MK8-TATP 2GB
Latency
48
Read speed
4,739.3
Write speed
2,002.5
№
320
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U72P8-C4 1GB
Latency
48
Read speed
4,275.7
Write speed
2,010.1
«
13
14
15
16
17
18
»
Dernières comparaisons
SK Hynix HMT325S6BFR8C-H9 2GB
Gloway International (HK) STK2400C15-16GB 16GB
Crucial Technology CT51264BC160B.M16F 4GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3600C16-16GTRGC 16GB
Samsung M393B5170FH0-CH9 4GB
G Skill Intl F4-3200C16-16GTZRX 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 9905668-001.A00G 8GB
Peak Electronics 256X64M-67E 2GB
Transcend Information JM3200HLE-16G 16GB
Kingston KF552C40-16 16GB
Shenzhen Technology Co Ltd 8GB
Kingston KF552C40-16 16GB
Apacer Technology D12.2324WT.001 8GB
Apacer Technology 78.C1GET.9K10C 8GB
INTENSO GKE800UD102408-2133 8GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-3600C19-8GSXF 8GB
Corsair CMK32GX5M2B5600C36 16GB
Kingston 9965589-043.E00G 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-2800C15-16GVR 16GB
Signaler un bogue
×
Bug description
Source link