RAM
DDR5
DDR4
DDR3
DDR2
このサイトについて
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
このサイトについて
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
RAM 1を選択
RAM 2を選択
比較する
DDR2 RAMリスト
すべてのメモリモジュール、レイテンシーの高い順に並べ替え
№
帯域幅
レイテンシー、ns
読み出し速度、GB/s
書き込み速度、GB/秒
№
301
RAM
Samsung M395T5160QZ4-CE76 4GB
Latency
48
Read speed
3,418.2
Write speed
2,581.1
№
302
RAM
Apacer Technology 78.01G92. 1GB
Latency
48
Read speed
3,118.2
Write speed
1,449.2
№
303
RAM
Kingston 16HTF51264HZ-800C1 4GB
Latency
48
Read speed
5,422.0
Write speed
2,134.5
№
304
RAM
Apacer Technology 78.A1GA0.9LM 2GB
Latency
48
Read speed
5,242.2
Write speed
2,546.3
№
305
RAM
Kingston TCM633-QAC 1GB
Latency
48
Read speed
5,249.2
Write speed
2,284.5
№
306
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-S6 2GB
Latency
48
Read speed
5,347.9
Write speed
2,374.7
№
307
RAM
Kingston 99U5315-020.A00LF 512MB
Latency
48
Read speed
4,187.1
Write speed
2,013.2
№
308
RAM
Transcend Information TS256MLQ64V5U 2GB
Latency
48
Read speed
3,315.5
Write speed
1,445.9
№
309
RAM
Transcend Information TS256MLQ64V8P 2GB
Latency
48
Read speed
5,509.9
Write speed
2,201.8
№
310
RAM
Apacer Technology 78.AAGA0.9L4 2GB
Latency
48
Read speed
5,124.4
Write speed
2,426.6
№
311
RAM
OCZ OCZ2RPR10661G 1GB
Latency
48
Read speed
5,545.5
Write speed
2,536.1
№
312
RAM
Kingston 99U5315-045.A00LF 1GB
Latency
48
Read speed
5,037.3
Write speed
2,241.1
№
313
RAM
Mushkin 991558+(996558+) 2GB
Latency
48
Read speed
5,408.8
Write speed
2,202.6
№
314
RAM
Transcend Information TX1066QLU-2GK 1GB
Latency
48
Read speed
5,599.5
Write speed
2,493.4
№
315
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U64BP8-S5 1GB
Latency
48
Read speed
4,756.8
Write speed
2,183.9
№
316
RAM
Kreton Corporation 515236225641452900 1GB
Latency
48
Read speed
4,345.7
Write speed
2,096.3
№
317
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U72BP8-Y5 1GB
Latency
48
Read speed
4,647.6
Write speed
1,763.7
№
318
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U72CP8-S6 1GB
Latency
48
Read speed
4,965.9
Write speed
2,099.1
№
319
RAM
TwinMOS 8DRP5MK8-TATP 2GB
Latency
48
Read speed
4,739.3
Write speed
2,002.5
№
320
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U72P8-C4 1GB
Latency
48
Read speed
4,275.7
Write speed
2,010.1
«
13
14
15
16
17
18
»
最新の比較
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMK16GX4M2B3200C14 8GB
Peak Electronics 256X64M-67E 2GB
Transcend Information JM3200HLE-16G 16GB
Kingston 99U5403-465.A00LF 8GB
Kingston K821PJ-MID 16GB
Samsung 1600 CL10 Series 8GB
KingSpec KingSpec 16GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
Kingston 9905471-006.A00LF 4GB
Samsung M393A1G40DB0-B`B 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-4000C16-8GTZR 8GB
Kingston KVR533D2N4 512MB
Corsair CMK32GX4M2A2666C16 16GB
Kingston 9905471-076.A00LF 8GB
Kingston 9905624-036.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
Samsung M471B5173QH0-YK0 4GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-2400C17-4GNT 4GB
Kingston 9905469-143.A00LF 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMR32GX4M2C3000C16 16GB
バグを報告する
×
Bug description
Source link