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A-DATA Technology VDQVE1B16 2GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
比较
A-DATA Technology VDQVE1B16 2GB vs Hyundai Inc GP-GR26C16S8K1HU408 8GB
总分
A-DATA Technology VDQVE1B16 2GB
总分
Hyundai Inc GP-GR26C16S8K1HU408 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
低于PassMark测试中的延时,ns
46
75
左右 39% 更低的延时
更快的读取速度,GB/s
4
14.3
测试中的平均数值
需要考虑的原因
Hyundai Inc GP-GR26C16S8K1HU408 8GB
报告一个错误
更快的写入速度,GB/s
6.3
2,061.2
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
75
读取速度,GB/s
4,937.3
14.3
写入速度,GB/s
2,061.2
6.3
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
759
1548
A-DATA Technology VDQVE1B16 2GB RAM的比较
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Hyundai Inc GP-GR26C16S8K1HU408 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5273CH0-CH9 4GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
A-DATA Technology VDQVE1B16 2GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Kingston 9965516-430.A00G 16GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-2800C17-8GVR 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
Kingston ACR256X64D3S1333C9 2GB
Jinyu CL16-16-16 D4-2400 8GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
G Skill Intl F4-3800C14-16GTZN 16GB
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMN32GX4M2Z4600C18 16GB
AMD R5316G1609U2K 8GB
Kingston XJV223-MIE-NX 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMD16GX4M4C3200C15 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT4G4SFS8213.C8FADP 4GB
Samsung M393B1K70CH0-CH9 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
takeMS International AG TMS2GB264D082-805G 2GB
INTENSO 5641162 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
报告一个错误
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Bug description
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