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Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Crucial Technology BLE4G4D26AFEA.8FADG 4GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
31
左右 13% 更低的延时
需要考虑的原因
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
报告一个错误
更快的读取速度,GB/s
16.4
13.9
测试中的平均数值
更快的写入速度,GB/s
12.4
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
31
读取速度,GB/s
13.9
16.4
写入速度,GB/s
8.4
12.4
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2251
3042
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Mushkin MR[ABC]4U320GJJM16G 16GB
A-DATA Technology ADOVE1A0834E 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
Samsung M393B2G70BH0-CH9 16GB
Apacer Technology 78.CAGPP.40C0B 8GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 99U5700-027.A00G 8GB
报告一个错误
×
Bug description
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