RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-3000C14-16GTZ 16GB
比较
Samsung M4 70T5663CZ3-CE6 2GB vs G Skill Intl F4-3000C14-16GTZ 16GB
总分
Samsung M4 70T5663CZ3-CE6 2GB
总分
G Skill Intl F4-3000C14-16GTZ 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
17.5
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3000C14-16GTZ 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
69
左右 -123% 更低的延时
更快的写入速度,GB/s
13.6
1,441.2
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-3000C14-16GTZ 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
69
31
读取速度,GB/s
3,325.1
17.5
写入速度,GB/s
1,441.2
13.6
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
525
3371
Samsung M4 70T5663CZ3-CE6 2GB RAM的比较
Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
G Skill Intl F4-3000C14-16GTZ 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T2863EHS-CF7 1GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
SK Hynix HYMP112S64CP6-S6 1GB
Mushkin 99[2/7/4]204[F/T] 4GB
Kingston 99P5471-002.A00LF 2GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Kingston HX426C16FB2/8-SP 8GB
Ramaxel Technology RMSA3260MD78HAF-2666 8GB
Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-3000C14-16GTZ 16GB
Kingston KF560C40-16 16GB
G Skill Intl F4-2800C15-16GVR 16GB
SpecTek Incorporated ?????????????????? 2GB
Patriot Memory (PDP Systems) PSD416G266681 16GB
Kingston 99U5474-026.A00LF 4GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Kingston 9905584-016.A00LF 4GB
Samsung M393A1K43BB1-CTD 8GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
Kingston KHX2400C11D3/4GX 4GB
Samsung M471A1K1KBB1-CRC 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston 9905713-004.A00G 4GB
报告一个错误
×
Bug description
Source link